Gate-induced drain leakage、次臨界區、vth定義在PTT/mobile01評價與討論，在ptt社群跟網路上大家這樣說

Gate-induced drain leakage在Gate Induced Drain Leakage - an overview - Science Direct的討論與評價

The off-state leakage of a MOSFET can be limited by gate-induced drain leakage (GIDL) that is strongly correlated to the bandgap of the channel material at ...

Gate-induced drain leakage在The impact of gate-induced drain leakage current on MOSFET ...的討論與評價

Abstract: Significant gate-induced drain leakage current can be detected in thin gate oxide MOSFETs at drain voltages much lower than the junction breakdown ...

Gate-induced drain leakage在EE-612: Lecture 16: MOSFET Leakage - nanoHUB的討論與評價

1) MOSFET leakage components. 2) Band to band tunneling. 3) Gate-induced drain leakage. 4) Gate leakage. 5) Scaling and ITRS. 6) Summary ...

Gate-induced drain leakage在Analysis of gate-induced drain leakage in ... - Springer LINK的討論與評價

Gate-induced drain leakage (GIDL) is a serious problem in nanoscale transistors. In this paper, GIDL induced by longitude band-to-band ...

Gate-induced drain leakage在Improving the Gate-Induced Drain Leakage and On ... - MDPI的討論與評價

Keywords: thin-film transistor transistors; gate induced drain leakage (GIDL); Band-to-band tunneling (BTBT). 1. Introduction.

Gate-induced drain leakage在第一章緒論的討論與評價

Emission)情況，即空乏區更窄導致電子很容易越過能障到達汲極端，甚至不需要. 額外能量。 1.2.4 閘極引發汲極漏電流(Gate Induced Drain Leakage). GIDL 漏電流[24, ...

Gate-induced drain leakage在suppression of gate induced drain leakage current (gidl) by ...的討論與評價

One of the leakage mechanisms which contribute significantly to power dissipation is the Gate Induced Drain Leakage (GIDL). GIDL sets an upper limit on the ...

Gate-induced drain leakage在Gate Induced Drain Leakage Current (GIDL) - YouTube的討論與評價

Gate-induced drain leakage在Behaviors of gate induced drain leakage stress in lightly ...的討論與評價

The gate-induced drain leakage (GIDL) current is induced by the band-to-band tunneling effect in the strong accumulation mode and generated in the gate-to-drain ...

Gate-induced drain leakage在Investigation of Gate-Induced Drain Leakage (GIDL) Current ...的討論與評價

Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET ...